Invention Grant
- Patent Title: Temperature control in RF chamber with heater and air amplifier
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Application No.: US15384209Application Date: 2016-12-19
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Publication No.: US10600620B2Publication Date: 2020-03-24
- Inventor: Jon McChesney , Alex Paterson
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Penilla IP. APC
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/326 ; H01J37/32 ; H01L21/3065

Abstract:
Systems, methods, and computer programs are presented for controlling the temperature of a window in a semiconductor manufacturing chamber. One apparatus includes a heater for receiving and heating a flow of air and an air amplifier coupled to pressurized gas. The air amplifier has an input that receives the flow of air from the heater, and the air amplifier having an output. A duct is coupled to the output of the air amplifier and a plenum is coupled to the duct. The plenum receives the flow of air and distributes the flow of air over a window of a plasma chamber. A temperature sensor is situated about the window of the plasma chamber and a controller is provided to control the air amplifier and the heater based on a temperature measured by the temperature sensor.
Public/Granted literature
- US20170103875A1 Temperature Control in RF Chamber with Heater and Air Amplifier Public/Granted day:2017-04-13
Information query
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