Invention Grant
- Patent Title: Method of fabricating device including two-dimensional material
-
Application No.: US16120728Application Date: 2018-09-04
-
Publication No.: US10600646B2Publication Date: 2020-03-24
- Inventor: Tae-jin Park , Bong-soo Kim , Jin-bum Kim , Yoo-sang Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2017-0112494 20170904
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/786 ; H01L29/66 ; H01L29/778 ; H01L29/06 ; H01L29/423 ; H01L29/78 ; H01L29/20 ; H01L29/16 ; H01L29/24
Abstract:
A method of fabricating a device including a two-dimensional (2D) material includes forming an amorphous transition metal oxide structure on a substrate and replacing the amorphous transition metal oxide structure by a transition metal dichalcogenide structure. The transition metal dichalcogenide structure includes atomic layers, that are substantially parallel to a surface of the transition metal dichalcogenide structure.
Public/Granted literature
- US20190074179A1 METHOD OF FABRICATING DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL Public/Granted day:2019-03-07
Information query
IPC分类:
