公开(公告)号：US20190074381A1

公开(公告)日：2019-03-07

申请号：US16120726

申请日：2018-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-jin Park ,  Jin-bum Kim ,  Bong-soo Kim ,  Kyu-pil Lee ,  Hyeong-sun Hong ,  Yoo-sang Hwang

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/423 ,  H01L29/78 ,  H01L29/86 ,  H01L29/66 ,  H01L21/02 ,  H01L29/06

Abstract: A device including a two-dimensional (2D) material includes a substrate including a recess recessed from a main surface of the substrate and extending in a first direction, a 2D material pattern on the substrate and intersecting with the recess of the substrate, a gate structure contacting the 2D material pattern and extending in the first direction along the recess of the substrate, a first electrode contacting a first end of the 2D material pattern, and a second electrode contacting a second end of the 2D material pattern. The 2D material pattern extends in a second direction and includes atomic layers that are parallel to a surface of the substrate.

公开(公告)号：US11251307B2

公开(公告)日：2022-02-15

申请号：US16120705

申请日：2018-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-jin Park ,  Jin-bum Kim ,  Bong-soo Kim ,  Kyu-pil Lee ,  Hyeong-sun Hong ,  Yoo-sang Hwang

IPC: H01L29/786 ,  H01L29/778 ,  H01L29/88 ,  H01L21/02 ,  H01L29/06 ,  H01L29/16 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/86 ,  H01L29/24

Abstract: A device includes a substrate, a first electrode on the substrate, an insulating pattern on the substrate, a second electrode on an upper end of the insulating pattern, a two-dimensional (2D) material layer on a side surface of the insulating pattern, a gate insulating layer covering the 2D material layer, and a gate electrode contacting the gate insulting layer. The insulating pattern extends from the first electrode in a direction substantially vertical to the substrate. The 2D material layer includes at least one atomic layer of a 2D material that is substantially parallel to the side surface of the insulating pattern.

公开(公告)号：US10600646B2

公开(公告)日：2020-03-24

申请号：US16120728

申请日：2018-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-jin Park ,  Bong-soo Kim ,  Jin-bum Kim ,  Yoo-sang Hwang

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/778 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/20 ,  H01L29/16 ,  H01L29/24

Abstract: A method of fabricating a device including a two-dimensional (2D) material includes forming an amorphous transition metal oxide structure on a substrate and replacing the amorphous transition metal oxide structure by a transition metal dichalcogenide structure. The transition metal dichalcogenide structure includes atomic layers, that are substantially parallel to a surface of the transition metal dichalcogenide structure.

公开(公告)号：US10515798B2

公开(公告)日：2019-12-24

申请号：US16120775

申请日：2018-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-jin Park ,  Bong-soo Kim ,  Jin-bum Kim ,  Yoo-sang Hwang

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/778 ,  H01L29/24 ,  H01L29/16 ,  H01L29/20

Abstract: A method of fabricating a device including a two-dimensional (2D) material includes forming a transition metal oxide pattern on a substrate and forming a transition metal dichalcogenide layer on a top surface and a side surface of a residual portion of the transition metal oxide pattern. The forming the transition metal dichalcogenide layer may include replacing a surface portion of the transition metal oxide pattern with the transition metal dichalcogenide layer. The transition metal dichalcogenide layer includes at least one atomic layer that is substantially parallel to a surface of the residual portion of the transition metal oxide pattern.