Invention Grant
- Patent Title: Systems and method for charge balanced semiconductor power devices with fast switching capability
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Application No.: US15953037Application Date: 2018-04-13
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Publication No.: US10600649B2Publication Date: 2020-03-24
- Inventor: Alexander Viktorovich Bolotnikov , Peter Almern Losee , Reza Ghandi , David Alan Lilienfeld
- Applicant: General Electric Company
- Applicant Address: US NY Niskayuna
- Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee Address: US NY Niskayuna
- Agency: Fletcher Yoder, P.C.
- Main IPC: H01L21/04
- IPC: H01L21/04 ; H01L29/36 ; H01L29/06 ; H01L29/78 ; H01L29/66 ; H01L29/16 ; H01L29/10
Abstract:
A method of manufacturing a semiconductor device including performing a first implantation in a semiconductor layer via ion implantation forming a first implantation region and performing a second implantation in the semiconductor layer via ion implantation forming a second implantation region. The first and second implantation overlap with one another and combine to form a connection region extending into the semiconductor layer by a predefined depth.
Public/Granted literature
- US20190088479A1 SYSTEMS AND METHOD FOR CHARGE BALANCED SEMICONDUCTOR POWER DEVICES WITH FAST SWITCHING CAPABILITY Public/Granted day:2019-03-21
Information query
IPC分类:
