Invention Grant
- Patent Title: Ultra-thin diffusion barriers
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Application No.: US16224337Application Date: 2018-12-18
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Publication No.: US10600684B2Publication Date: 2020-03-24
- Inventor: Susmit Singha Roy , Yihong Chen , Abhijit Basu Mallick , Srinivas Gandikota
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; H01L21/3105 ; H01L21/324
Abstract:
In one embodiment, a method of forming a barrier layer is provided. The method includes positioning a substrate in a processing chamber, forming a barrier layer over the substrate and in contact with the underlayer, and annealing the substrate. The substrate comprises at least one underlayer having cobalt, tungsten, or copper. The barrier layer has a thickness of less than 70 angstroms.
Public/Granted literature
- US20190189506A1 ULTRA-THIN DIFFUSION BARRIERS Public/Granted day:2019-06-20
Information query
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