Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16126018Application Date: 2018-09-10
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Publication No.: US10600771B2Publication Date: 2020-03-24
- Inventor: Jun Iijima , Yumi Nakajima
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2018-051475 20180319
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L25/18 ; H01L25/065 ; H01L25/00 ; H01L23/00

Abstract:
In one embodiment, a semiconductor device includes a first interconnection including a first extending portion extending in a first direction, and a first curved portion curved with respect to the first extending portion. The device further includes a second interconnection including a second extending portion extending in the first direction and adjacent to the first extending portion in a second direction, and a second curved portion curved with respect to the second extending portion. The device further includes a first plug provided on the first curved portion, or on a first non-opposite portion included in the first extending portion and not opposite to the second extending portion in the second direction. The device further includes a second plug provided on the second curved portion, or on a second non-opposite portion included in the second extending portion and not opposite to the first extending portion in the second direction.
Public/Granted literature
- US20190287955A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-09-19
Information query
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