A semiconductor structure is provided which includes a nanosheet stack structure on a base. The nanosheet stack structure includes a multilayered nanosheet between adjacent nanosheet layers. The multilayered nanosheet includes one or more first layers of a first material and one or more second layers of a second material, wherein the first material has an etch selectivity different than the second material. The one or more first layers of the multilayered nanosheet are recessed. A first inner spacer includes a third material is formed by depositing the third material into an outer portion of the one or more recessed first layers of the multilayered nanosheet. The one or more second layers of the multilayered nanosheet are recessed. A second inner spacer includes a fourth material which is formed by depositing the fourth material into an outer portion of the one or more recessed second layers of the first multilayered nanosheet.