发明授权
- 专利标题： Power switching devices with DV/DT capability and methods of making such devices
-
申请号： US15699149申请日： 2017-09-08
-
公开(公告)号： US10601413B2公开(公告)日： 2020-03-24
- 发明人: Qingchun Zhang , Adam Barkley , Sei-Hyung Ryu , Brett Hull
- 申请人： Cree, Inc.
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Myers Bigel, P.A.
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H03K17/12 ; H01L29/423 ; H01L29/78 ; H01L29/10 ; H01L29/739 ; H01L29/16 ; H01L29/417 ; H01L29/40
摘要：
Power switching devices include a semiconductor layer structure that has an active region and an inactive region. The active region includes a plurality of unit cells and the inactive region includes a field insulating layer on the semiconductor layer structure and a gate bond pad on the field insulating layer opposite the semiconductor layer structure. A gate insulating pattern is provided on the semiconductor layer structure between the active region and the field insulating layer, and at least one source/drain contact is provided on the semiconductor layer structure between the gate insulating pattern and the field insulating layer.
公开/授权文献
信息查询
IPC分类:
