- 专利标题: Process for ion implantation
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申请号: US14377403申请日: 2013-02-08
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公开(公告)号: US10604445B2公开(公告)日: 2020-03-31
- 发明人: Gin Jose , Toney Teddy Fernandez , Peter John Grant , Animesh Jha , Sikha Saha , David Paul Steenson
- 申请人: UNIVERSITY OF LEEDS
- 申请人地址: GB Leeds
- 专利权人: UNIVERSITY OF LEEDS
- 当前专利权人: UNIVERSITY OF LEEDS
- 当前专利权人地址: GB Leeds
- 代理机构: Dann, Dorfman, Herrell & Skillman, P.C.
- 代理商 Niels Haun
- 优先权: GB1202128.3 20120208
- 国际申请: PCT/GB2013/050300 WO 20130208
- 国际公布: WO2013/117941 WO 20130815
- 主分类号: C23C14/32
- IPC分类号: C23C14/32 ; C03C23/00 ; C03C3/04 ; C23C14/48 ; A61B5/1455 ; C23C14/28 ; C23C14/22 ; G02B6/12
摘要:
The present invention relates to a substrate comprising an ion-implanted layer, for example a cation, wherein the ion implanted layer has a substantially uniform distribution of the implanted ions at a significantly greater depth than previously possible, to a well-defined and sharp boundary within the substrate. The invention further comprises said sub-strate wherein the substrate is a silicon based substrate, such as glass. The invention also comprises the use of said material as a waveguide and the use of said material in measurement devices.
公开/授权文献
- US20170297958A9 NOVEL MATERIAL 公开/授权日:2017-10-19
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