- Patent Title: Method of manufacturing semiconductor device by etching and washing
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Application No.: US16190127Application Date: 2018-11-13
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Publication No.: US10607834B2Publication Date: 2020-03-31
- Inventor: Motohiro Toyota , Yoshihiro Oshima
- Applicant: JOLED INC.
- Applicant Address: JP Tokyo
- Assignee: JOLED INC.
- Current Assignee: JOLED INC.
- Current Assignee Address: JP Tokyo
- Agency: Hauptman Ham, LLP
- Priority: JP2018-086326 20180427
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; H01L21/441 ; H01L21/4763 ; H01L29/24 ; H01L29/786 ; B08B3/08 ; H01L21/4757 ; G02F1/1368 ; H01L27/32
Abstract:
A method of manufacturing a semiconductor device includes forming a semiconductor film including an oxide semiconductor material, forming a gate electrode facing the semiconductor film, forming a gate insulating film between the gate electrode and the semiconductor film, the gate insulating film having a side face that is uncovered with the gate electrode; and washing the side face of the gate insulating film with use of a chemical liquid that is able to dissolve the oxide semiconductor material.
Public/Granted literature
- US20190333758A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2019-10-31
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