公开(公告)号：US11063109B2

公开(公告)日：2021-07-13

申请号：US16830289

申请日：2020-03-26

Applicant: JOLED INC.

Inventor： Atsuhito Murai ,  Yasuhiro Terai ,  Takashi Maruyama ,  Yoshihiro Oshima ,  Motohiro Toyota ,  Ryosuke Ebihara ,  Yasunobu Hiromasu

IPC: H01L27/32 ,  H01L51/52 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L27/12

Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

公开(公告)号：US10763371B2

公开(公告)日：2020-09-01

申请号：US15813735

申请日：2017-11-15

Applicant: Joled Inc.

Inventor： Narihiro Morosawa ,  Yoshihiro Oshima

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/417

Abstract: A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.

公开(公告)号：US10607834B2

公开(公告)日：2020-03-31

申请号：US16190127

申请日：2018-11-13

Applicant: JOLED INC.

Inventor： Motohiro Toyota ,  Yoshihiro Oshima

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/441 ,  H01L21/4763 ,  H01L29/24 ,  H01L29/786 ,  B08B3/08 ,  H01L21/4757 ,  G02F1/1368 ,  H01L27/32

Abstract: A method of manufacturing a semiconductor device includes forming a semiconductor film including an oxide semiconductor material, forming a gate electrode facing the semiconductor film, forming a gate insulating film between the gate electrode and the semiconductor film, the gate insulating film having a side face that is uncovered with the gate electrode; and washing the side face of the gate insulating film with use of a chemical liquid that is able to dissolve the oxide semiconductor material.

公开(公告)号：US20180076330A1

公开(公告)日：2018-03-15

申请号：US15813735

申请日：2017-11-15

Applicant: Joled Inc.

Inventor： Narihiro Morosawa ,  Yoshihiro Oshima

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66

Abstract: A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.

公开(公告)号：US09466655B2

公开(公告)日：2016-10-11

申请号：US14739558

申请日：2015-06-15

Applicant: JOLED Inc.

Inventor： Yoshihiro Oshima

IPC: H01L27/32

CPC classification number: H01L27/3276 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3279

Abstract: A display unit includes: a drive substrate including a thin film transistor; a pixel section provided on the drive substrate and including a plurality of pixels, each of the pixels including a first electrode, an organic layer including a light-emitting layer, and a second electrode in this order; and a connection section provided in a peripheral region around the pixel section in the drive substrate and configured to be electrically connected to the second electrode, in which the connection section includes an oxide semiconductor layer including, in at least a portion on a surface side thereof, a low-resistance region with lower electrical resistance than that in a portion other than the low-resistance region.

Abstract translation: 显示单元包括：包括薄膜晶体管的驱动基板; 设置在驱动基板上并且包括多个像素的像素部分，每个像素包括第一电极，包括发光层的有机层和第二电极; 以及连接部，其设置在所述驱动基板的像素部周围的周围区域中，并且被配置为与所述第二电极电连接，所述连接部包括氧化物半导体层，所述氧化物半导体层在其表面侧的至少一部分 具有低于低电阻区域以外的部分的电阻低的低电阻区域。