公开(公告)号：US11063109B2

公开(公告)日：2021-07-13

申请号：US16830289

申请日：2020-03-26

Applicant: JOLED INC.

Inventor： Atsuhito Murai ,  Yasuhiro Terai ,  Takashi Maruyama ,  Yoshihiro Oshima ,  Motohiro Toyota ,  Ryosuke Ebihara ,  Yasunobu Hiromasu

IPC: H01L27/32 ,  H01L51/52 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L27/12

Abstract: A display unit includes a first substrate, a transistor, first and second wiring layers, and an insulating film. The first substrate is provided with a display region and a peripheral region. The transistor is provided in the display region, and includes a semiconductor layer, a gate electrode facing the semiconductor layer, a gate insulating film between the gate electrode and the semiconductor layer, and a source-drain electrode electrically coupled to the semiconductor layer. The first wiring layer is provided in the peripheral region, electrically coupled to the transistor, and disposed closer to the first substrate than the same layer as the gate electrode and the source-drain electrode. The second wiring layer is provided on the first substrate and has an electric potential different from the first wiring layer. The insulating film is provided between the second wiring layer and the first wiring layer.

公开(公告)号：US10109650B2

公开(公告)日：2018-10-23

申请号：US15466827

申请日：2017-03-22

Applicant: JOLED Inc.

Inventor： Yasunobu Hiromasu ,  Motohiro Toyota ,  Shinichi Ushikura

IPC: H01L27/12 ,  H01L27/02 ,  H01L27/32 ,  H01L29/786 ,  H01L29/423

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate including a pixel area and a peripheral circuit area around the pixel area, a first insulating layer which is provided on the insulating substrate and includes at least nitrogen, a second insulating layer at least provided on the first insulating layer of the peripheral circuit area, a first thin-film transistor which is provided above the first insulating layer of the pixel area and includes a first oxide semiconductor layer, and a second thin-film transistor which is provided on the second insulating layer of the peripheral circuit area and includes a second oxide semiconductor layer. The second insulating layer in the pixel area is thinner than that in the peripheral circuit area.

公开(公告)号：US10607834B2

公开(公告)日：2020-03-31

申请号：US16190127

申请日：2018-11-13

Applicant: JOLED INC.

Inventor： Motohiro Toyota ,  Yoshihiro Oshima

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/441 ,  H01L21/4763 ,  H01L29/24 ,  H01L29/786 ,  B08B3/08 ,  H01L21/4757 ,  G02F1/1368 ,  H01L27/32

Abstract: A method of manufacturing a semiconductor device includes forming a semiconductor film including an oxide semiconductor material, forming a gate electrode facing the semiconductor film, forming a gate insulating film between the gate electrode and the semiconductor film, the gate insulating film having a side face that is uncovered with the gate electrode; and washing the side face of the gate insulating film with use of a chemical liquid that is able to dissolve the oxide semiconductor material.

公开(公告)号：US10551704B2

公开(公告)日：2020-02-04

申请号：US15615834

申请日：2017-06-07

Applicant: JOLED INC.

Inventor： Eri Matsuo ,  Tomoatsu Kinoshita ,  Motohiro Toyota ,  Yasunobu Hiromasu

IPC: G02F1/1362 ,  H01L23/00 ,  H01L27/12

Abstract: Provided is an active matrix substrate that includes a substrate, a thin film transistor, an electrode layer, and a second insulating film. The thin film transistor is provided on the substrate and includes an oxide semiconductor layer, a gate electrode, and source and drain electrodes. The oxide semiconductor layer includes a first region as a channel region. The electrode layer is level with the gate electrode, is provided in a different region from the thin film transistor, and includes a first end. The second insulating film is provided between the substrate and the electrode layer and includes a second end at a more retreated position than the first end of the electrode layer. The oxide semiconductor layer further includes a second region having lower resistance than the first region. The electrode layer is electrically coupled, at the first end, to the second region of the oxide semiconductor layer.

公开(公告)号：US10319883B2

公开(公告)日：2019-06-11

申请号：US15808931

申请日：2017-11-10

Applicant: JOLED INC.

Inventor： Atsuhito Murai ,  Motohiro Toyota

IPC: H01L33/38 ,  H01L33/40 ,  H01L27/32 ,  H01L27/12 ,  H01L27/15

Abstract: A semiconductor device includes a substrate, a gate electrode, an oxide semiconductor film, a first electrode, a second electrode, and a third electrode. The gate electrode is provided on the substrate. The oxide semiconductor film is provided on the substrate with the gate electrode interposed therebetween. The oxide semiconductor film includes a channel region facing the gate electrode and a low-resistance region adjacent to the channel region. The first electrode contains a constituent material same as that of the gate electrode, and has same thickness as that of the gate electrode. The second electrode has at least a portion facing the first electrode, and contains a constituent material same as that of the oxide semiconductor film. The third electrode has at least a portion provided at a position facing the first electrode with the second electrode interposed therebetween. The third electrode is electrically coupled to the first electrode.