Some embodiments include a memory cell having first and second transistors and first and second capacitors. The first capacitor is vertically displaced relative to the first transistor. The first capacitor has a first node electrically coupled with a source/drain region of the first transistor, a second node electrically coupled with a common plate structure, and a first capacitor dielectric material between the first and second nodes. The second capacitor is vertically displaced relative to the second transistor. The second capacitor has a third node electrically coupled with a source/drain region of the second transistor, a fourth node electrically coupled with the common plate structure, and a second capacitor dielectric material between the first and second nodes. Some embodiments include memory arrays having 2T-2C memory cells.