Invention Grant
- Patent Title: Method for lateral patterning of a pattern layer with three-dimensional pattern elements, and semiconductor device
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Application No.: US15312169Application Date: 2015-05-19
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Publication No.: US10608081B2Publication Date: 2020-03-31
- Inventor: Martin Mandl , Tilman Schimpke
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OLED GMBH
- Current Assignee: OSRAM OLED GMBH
- Current Assignee Address: DE Regensburg
- Agency: McDermott Will & Emery LLP
- Priority: DE102014107167 20140521
- International Application: PCT/EP2015/060972 WO 20150519
- International Announcement: WO2015/177131 WO 20151126
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/304 ; H01L33/18 ; H01L33/00 ; H01L21/308 ; H01L29/20 ; H01L33/08 ; H01L33/22 ; H01L33/24
Abstract:
The invention relates to a method for laterally structuring a structured layer (2) with a plurality of three-dimensional structure elements (20), having the following steps: a) providing the structured layer with the three-dimensional structure elements; b) forming a laterally structured covering layer (3) on the structured layer in order to define at least one structured layer region (4) to be removed; and c) removing the structured layer region to be removed by means of a force acting on the structure elements in the region to be removed. The invention further relates to a semiconductor component (1).
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