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1.发明申请公开(公告)号：US20170365749A1
公开(公告)日：2017-12-21
申请号：US15543881
申请日：2016-01-26
摘要： An optoelectronic arrangement having a radiation conversion element and a method for producing a radiation conversion element are disclosed. In an embodiment, an optoelectronic arrangement includes a semiconductor chip having an active region configured to generate radiation, a radiation conversion element arranged downstream of the semiconductor chip in an emission direction and a reflective polarization element arranged downstream of the radiation conversion element in the emission direction. The radiation conversion element has a plurality of conversion elements, each of which has an axis of symmetry, the spatial orientation of the axes of symmetry has a preferred direction and a radiation emitted by the radiation conversion element has a preferred polarization. The reflective polarization element largely allows radiation with the preferred polarization to pass through and largely reflects radiation polarized perpendicularly to the preferred polarization.
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公开(公告)号：US09966503B2
公开(公告)日：2018-05-08
申请号：US15038562
申请日：2014-12-18
发明人： Martin Straβburg , Martin Mandl , Tilman Schimpke , Ion Stoll , Barbara Huckenbeck , Franz Zwaschka , Daniel Bichler
CPC分类号： H01L33/502 , H01L27/156 , H01L33/08 , H01L33/24 , H01L33/32 , H01L33/504 , H01L33/505 , H01L33/56 , H01L2933/0041 , H01L2933/005 , H01L2933/0091
摘要： An optoelectronic semiconductor component and a method for manufacturing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a plurality of active regions configured to generate a primary radiation and a plurality of luminescent material particles configured to convert the primary radiation into a secondary radiation, wherein the active regions are arranged spaced apart from each other, wherein each active region has a main extension direction, wherein each active region has a core region comprising a first semiconductor material, wherein each active region has an active layer covering the core region, wherein each active region has a cover layer comprising a second semiconductor material and covering the active layer, wherein at least some of the luminescent material particles are arranged between the active regions, and wherein a diameter of a majority of the luminescent material particles is smaller than a distance between two adjacent active regions.
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公开(公告)号：US10608081B2
公开(公告)日：2020-03-31
申请号：US15312169
申请日：2015-05-19
发明人： Martin Mandl , Tilman Schimpke
IPC分类号： H01L29/06 , H01L21/304 , H01L33/18 , H01L33/00 , H01L21/308 , H01L29/20 , H01L33/08 , H01L33/22 , H01L33/24
摘要： The invention relates to a method for laterally structuring a structured layer (2) with a plurality of three-dimensional structure elements (20), having the following steps: a) providing the structured layer with the three-dimensional structure elements; b) forming a laterally structured covering layer (3) on the structured layer in order to define at least one structured layer region (4) to be removed; and c) removing the structured layer region to be removed by means of a force acting on the structure elements in the region to be removed. The invention further relates to a semiconductor component (1).
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