Method for lateral patterning of a pattern layer with three-dimensional pattern elements, and semiconductor device
Abstract:
The invention relates to a method for laterally structuring a structured layer (2) with a plurality of three-dimensional structure elements (20), having the following steps: a) providing the structured layer with the three-dimensional structure elements; b) forming a laterally structured covering layer (3) on the structured layer in order to define at least one structured layer region (4) to be removed; and c) removing the structured layer region to be removed by means of a force acting on the structure elements in the region to be removed. The invention further relates to a semiconductor component (1).
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