Invention Grant
- Patent Title: Processing method and plasma processing apparatus
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Application No.: US15903437Application Date: 2018-02-23
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Publication No.: US10651044B2Publication Date: 2020-05-12
- Inventor: Michiko Nakaya , Masanobu Honda
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@82c96f5
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01J37/32 ; H01L21/768 ; H01L21/311 ; H01L21/02
Abstract:
A processing method including a first step of supplying a first gas including a carbon-containing gas and an inert gas into an inside of a chamber and a second step of generating plasma from the supplied first gas by applying high frequency power for generating plasma and causing a chemical compound including organic matter on a pattern of a predetermined film formed on an object to be processed, wherein a ratio of the carbon-containing gas relative to the inert gas included in the first gas is 1% or less.
Public/Granted literature
- US20180247826A1 PROCESSING METHOD AND PLASMA PROCESSING APPARATUS Public/Granted day:2018-08-30
Information query
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