公开(公告)号：US11804379B2

公开(公告)日：2023-10-31

申请号：US17405305

申请日：2021-08-18

Applicant: Tokyo Electron Limited

Inventor： Taku Gohira ,  Michiko Nakaya

IPC: H01L21/311 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/32724 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/0217 ,  H01L21/02164

Abstract: An etching method of forming, on a substrate having a base film; a stacked film in which a first film and a second film are alternately stacked on the base film; and a mask on the stacked film, a recess in the stacked film through the mask by using plasma includes preparing the substrate; and etching the stacked film until the recess of the stacked film reaches the base film by plasma formed from a gas containing hydrogen, fluorine and carbon, while maintaining a substrate temperature equal to or less than 15° C.

公开(公告)号：US12071687B2

公开(公告)日：2024-08-27

申请号：US17900577

申请日：2022-08-31

Applicant: Tokyo Electron Limited

Inventor： Michiko Nakaya ,  Toru Hisamatsu ,  Shinya Ishikawa ,  Sho Kumakura ,  Masanobu Honda ,  Yoshihide Kihara

IPC: C23C16/455 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311

CPC classification number: C23C16/45536 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52 ,  H01J37/32834 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/31144 ,  H01J2237/3321 ,  H01J2237/3341

Abstract: A plasma processing apparatus in the present disclosure includes a plasma processing chamber, a gas supply, a power supply, and a controller. The controller causes (a) forming a first film on side walls of an opening of a processing target using the plasma so that the first film has different thicknesses along a spacing between pairs of side walls facing each other, and (b) forming a second film by performing a film forming cycle one or more times after (a) so that the second film has different thicknesses along the spacing between the pairs of side walls facing each other.

公开(公告)号：US20220059360A1

公开(公告)日：2022-02-24

申请号：US17405305

申请日：2021-08-18

Applicant: Tokyo Electron Limited

Inventor： Taku Gohira ,  Michiko Nakaya

IPC: H01L21/311 ,  H01L21/3213 ,  H01J37/32

Abstract: An etching method of forming, on a substrate having a base film; a stacked film in which a first film and a second film are alternately stacked on the base film; and a mask on the stacked film, a recess in the stacked film through the mask by using plasma includes preparing the substrate; and etching the stacked film until the recess of the stacked film reaches the base film by plasma formed from a gas containing hydrogen, fluorine and carbon, while maintaining a substrate temperature equal to or less than 15° C.

公开(公告)号：US12080521B2

公开(公告)日：2024-09-03

申请号：US18220403

申请日：2023-07-11

Applicant: Tokyo Electron Limited

Inventor： Michiko Nakaya ,  Yuya Minoura ,  Taku Gohira

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J2237/332

Abstract: A method of processing a substrate with plasma includes: coating surfaces of components inside a chamber with a film having conductive properties by turning a first gas containing carbon and hydrogen into plasma inside the chamber; loading the substrate into the chamber; and processing the substrate by turning a second gas into plasma inside the chamber in a state where the surfaces of the components inside the chamber are coated with the film having conductive properties.

公开(公告)号：US11728176B2

公开(公告)日：2023-08-15

申请号：US17269602

申请日：2019-08-08

Applicant: Tokyo Electron Limited

Inventor： Kiyohito Ito ,  Shinya Morikita ,  Kensuke Taniguchi ,  Michiko Nakaya ,  Masanobu Honda

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/3213

CPC classification number: H01L21/31144 ,  H01L21/0271 ,  H01L21/32139

Abstract: A treatment method is provided that includes an embedding step of embedding an organic film in an undercoat film in which a depression is formed; and an etching step of performing etching, after the embedding step, until at least a portion of a top of the undercoat film is exposed.

公开(公告)号：US11749508B2

公开(公告)日：2023-09-05

申请号：US17182896

申请日：2021-02-23

Applicant: Tokyo Electron Limited

Inventor： Michiko Nakaya ,  Yuya Minoura ,  Taku Gohira

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J2237/332

Abstract: A method of processing a substrate with plasma includes: coating surfaces of components inside a chamber with a film having conductive properties by turning a first gas containing carbon and hydrogen into plasma inside the chamber; loading the substrate into the chamber; and processing the substrate by turning a second gas into plasma inside the chamber in a state where the surfaces of the components inside the chamber are coated with the film having conductive properties.

公开(公告)号：US11699614B2

公开(公告)日：2023-07-11

申请号：US15897467

申请日：2018-02-15

Applicant: Tokyo Electron Limited

Inventor： Michiko Nakaya ,  Masanobu Honda

IPC: H01L21/762 ,  H01L21/67 ,  H01L21/02 ,  H01L21/683 ,  C23C16/505 ,  H01J37/32

CPC classification number: H01L21/76224 ,  C23C16/505 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/0212 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/6833 ,  H01J2237/332 ,  H01L21/0217 ,  H01L21/02118

Abstract: A film deposition method includes maintaining an inside of a chamber to have a predetermined pressure, cooling a stage, on which the object to be processed mounts, to have an ultralow temperature of −20° C., and mounting the object to be processed on the stage, supplying a gas including a low vapor pressure material gas of a low vapor pressure material into the inside of the chamber, and generating plasma from the supplied gas including the gas of the low vapor pressure material, and causing a precursor generated from the low vapor pressure material by the plasma to be deposited on a recess part of the object to be processed.

公开(公告)号：US11459655B2

公开(公告)日：2022-10-04

申请号：US16522890

申请日：2019-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Michiko Nakaya ,  Toru Hisamatsu ,  Shinya Ishikawa ,  Sho Kumakura ,  Masanobu Honda ,  Yoshihide Kihara

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  C23C16/52

Abstract: A plasma processing method executed by a plasma processing apparatus in the present disclosure includes a first step and a second step. In the first step, the plasma processing apparatus forms a first film on the side walls of an opening in the processing target, the first film having different thicknesses along a spacing between pairs of side walls facing each other. In the second step, the plasma processing apparatus forms a second film by performing a film forming cycle once or more times after the first step, the second film having different thicknesses along the spacing between the pairs of side walls facing each other.

公开(公告)号：US10886138B2

公开(公告)日：2021-01-05

申请号：US16416424

申请日：2019-05-20

Applicant: Tokyo Electron Limited

Inventor： Timothy Tianshyun Yang ,  Shinya Morikita ,  Kiyohito Ito ,  Michiko Nakaya ,  Masanobu Honda

IPC: H01L21/311 ,  H01L21/02

Abstract: An etching shape can be suppressed from having non-uniform pattern. A substrate processing method includes burying an organic film in a recess surrounded by a silicon-containing film formed on a sidewall of a pattern of photoresist on a target film; and etching or sputtering the organic film and the silicon-containing film under a condition in which a selectivity thereof is about 1:1.

公开(公告)号：US10651044B2

公开(公告)日：2020-05-12

申请号：US15903437

申请日：2018-02-23

Applicant: Tokyo Electron Limited

Inventor： Michiko Nakaya ,  Masanobu Honda

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/768 ,  H01L21/311 ,  H01L21/02

Abstract: A processing method including a first step of supplying a first gas including a carbon-containing gas and an inert gas into an inside of a chamber and a second step of generating plasma from the supplied first gas by applying high frequency power for generating plasma and causing a chemical compound including organic matter on a pattern of a predetermined film formed on an object to be processed, wherein a ratio of the carbon-containing gas relative to the inert gas included in the first gas is 1% or less.