Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16015286Application Date: 2018-06-22
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Publication No.: US10651206B2Publication Date: 2020-05-12
- Inventor: Masahiro Tada
- Applicant: Japan Display Inc.
- Applicant Address: JP Minato-ku
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@522b2032
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/861 ; G02F1/1362 ; H01L29/786 ; H01L27/02 ; G02F1/1368 ; H01L29/40

Abstract:
According to one embodiment, a semiconductor device includes a first gate electrode, a semiconductor layer, a first insulating layer, a second gate electrode, a second insulating layer, a third insulating layer, a first contact hole, and a first electrode. The first electrode passes through the first contact hole and electrically connects the first gate electrode, the first region and the second gate electrode.
Public/Granted literature
- US20180374875A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-12-27
Information query
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