Invention Grant
- Patent Title: Integration of III-nitride nanowire on transparent conductive substrates for optoelectronic and electronic devices
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Application No.: US15906694Application Date: 2018-02-27
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Publication No.: US10651343B2Publication Date: 2020-05-12
- Inventor: Boon S. Ooi , Aditya Prabaswara , Bilal Janjua , Tien Khee Ng
- Applicant: King Abdullah University of Science and Technology
- Applicant Address: SA Thuwal
- Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: SA Thuwal
- Agency: Billion & Armitage
- Agent Gregory S. Schwartz
- Main IPC: H01L33/24
- IPC: H01L33/24 ; H01L33/00 ; H01L33/06 ; H01L33/08 ; H01L33/42 ; H01L33/40 ; H01L33/16 ; H01L33/32 ; H01L33/38 ; H01L33/62
Abstract:
A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.
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