- 专利标题: Three dimensional integrated circuit electrostatic discharge protection and prevention test interface
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申请号: US15882256申请日: 2018-01-29
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公开(公告)号: US10652987B2公开(公告)日: 2020-05-12
- 发明人: Mill-Jer Wang , Ching-Nen Peng , Hung-Chih Lin , Hao Cheng
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 主分类号: H05F3/00
- IPC分类号: H05F3/00 ; H05F3/02 ; H02H9/04 ; G01R1/073 ; G01R1/36 ; H05K1/11 ; H05K1/18
摘要:
The present disclosure provides a system and method for providing electrostatic discharge protection. A probe card assembly is provided which is electrically connected to a plurality of input/output channels. The probe card assembly can be contacted with a secondary assembly having an interposer electrically connected to one or more wafers each wafer having a device under test. Voltage can be forced on ones of the plural input/output channels of the probe card assembly to slowly dissipate charges resident on the wafer to thereby provide electrostatic discharge protection. A socket assembly adaptable to accept a 3DIC package is also provided, the assembly having a loadboard assembly electrically connected to a plurality of input/output channels. Once the 3DIC package is placed within the socket assembly, voltage is forced on ones of the input/output channels to slowly dissipate charges resident on the 3DIC package to thereby provide electrostatic discharge protection.
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