In accordance with a first aspect of the present disclosure, a non-volatile memory is provided, comprising: a plurality of storage elements; a plurality of access transistors, said access transistors being connected to one or more of said storage elements; a measurement unit, wherein said measurement unit is configured to measure a variation between electrical characteristics of said access transistors; a processing unit configured to use said variation between electric characteristics as a physical unclonable function. In accordance with a second aspect of the present disclosure, a corresponding method of manufacturing a non-volatile memory is conceived.