The present disclosure relates to methods for forming replacement metal gate (RMG) structures and related structures. A method may include: forming a portion of sacrificial material around each fin of a set of adjacent fins; forming a first dielectric region between the portions of sacrificial material; forming a second dielectric region on the first dielectric region; forming an upper source/drain region from an upper portion of each fin; removing only the second dielectric region and the sacrificial material; and forming a work function metal (WFM) in place of the second dielectric region and the sacrificial material. The semiconductor structure may include gate structures surrounding adjacent fins; a first dielectric region between the gate structures; a second dielectric region above the first dielectric region and between the gate structures; and a liner between the first dielectric region and the gate structures such that the second dielectric region directly contacts the gate structures.