- Patent Title: Method for forming replacement metal gate and related structures
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Application No.: US16002385Application Date: 2018-06-07
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Publication No.: US10658243B2Publication Date: 2020-05-19
- Inventor: Ruilong Xie , Daniel Chanemougame , Steven R. Soss , Steven J. Bentley , Chanro Park
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Anthony Canale
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/088 ; H01L21/311 ; H01L29/66 ; H01L29/51

Abstract:
The present disclosure relates to methods for forming replacement metal gate (RMG) structures and related structures. A method may include: forming a portion of sacrificial material around each fin of a set of adjacent fins; forming a first dielectric region between the portions of sacrificial material; forming a second dielectric region on the first dielectric region; forming an upper source/drain region from an upper portion of each fin; removing only the second dielectric region and the sacrificial material; and forming a work function metal (WFM) in place of the second dielectric region and the sacrificial material. The semiconductor structure may include gate structures surrounding adjacent fins; a first dielectric region between the gate structures; a second dielectric region above the first dielectric region and between the gate structures; and a liner between the first dielectric region and the gate structures such that the second dielectric region directly contacts the gate structures.
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