Invention Grant
- Patent Title: Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells
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Application No.: US16654908Application Date: 2019-10-16
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Publication No.: US10658285B2Publication Date: 2020-05-19
- Inventor: Sanh D. Tang , Roger W. Lindsay , Krishna K. Parat
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/1157
- IPC: H01L27/1157 ; H01L23/52 ; H01L27/10 ; G11C13/00 ; H01L23/528 ; H01L27/11556 ; H01L27/11582 ; H01L27/24 ; H01L45/00 ; H01L27/11524
Abstract:
A method of forming circuitry components includes forming a stack of horizontally extending and vertically overlapping features. The stack has a primary portion and an end portion. At least some of the features extend farther in the horizontal direction in the end portion moving deeper into the stack in the end portion. Operative structures are formed vertically through the features in the primary portion and dummy structures are formed vertically through the features in the end portion. Horizontally elongated openings are formed through the features to form horizontally elongated and vertically overlapping lines from material of the features. The lines individually extend from the primary portion into the end portion, and individually laterally about sides of vertically extending portions of both the operative structures and the dummy structures. Sacrificial material that is elevationally between the lines is at least partially removed in the primary and end portions laterally between the horizontally elongated openings. Other aspects and implementations are disclosed.
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