Invention Grant
- Patent Title: Three-dimensional memory device with reduced etch damage to memory films and methods of making the same
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Application No.: US16019677Application Date: 2018-06-27
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Publication No.: US10658377B2Publication Date: 2020-05-19
- Inventor: Tomohiro Kubo , Koji Miyata , Kota Funayama
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/1157 ; H01L21/768 ; H01L27/11573
Abstract:
A first memory film and a sacrificial fill structure are formed within each first-tier memory opening through a first alternating stack of first insulating layers and first spacer material layers. A second alternating stack of second insulating layers and second spacer material layers is formed over the first alternating stack, and a second-tier memory opening is formed over each sacrificial fill structure. A second memory film is formed in each upper opening, and the sacrificial fill structures are removed from underneath the second-tier memory openings to form memory openings. A semiconductor channel is formed on each vertically neighboring pair of a first memory film and a second memory film as a continuous layer. The first memory film is protected by the sacrificial fill structure during formation of the second-tier memory openings.
Public/Granted literature
- US20200006373A1 THREE-DIMENSIONAL MEMORY DEVICE WITH REDUCED ETCH DAMAGE TO MEMORY FILMS AND METHODS OF MAKING THE SAME Public/Granted day:2020-01-02
Information query
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