Invention Grant
- Patent Title: Aluminum compatible thin-film resistor (TFR) and manufacturing methods
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Application No.: US16037889Application Date: 2018-07-17
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Publication No.: US10658453B2Publication Date: 2020-05-19
- Inventor: Justin Hiroki Sato , Yaojian Leng , Greg Stom
- Applicant: Microchip Technology Incorporated
- Applicant Address: US AZ Chandler
- Assignee: MICROCHIP TECHNOLOGY INCORPORATED
- Current Assignee: MICROCHIP TECHNOLOGY INCORPORATED
- Current Assignee Address: US AZ Chandler
- Agency: Slayden Grubert Beard PLLC
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/522 ; H01L21/311 ; H01L21/3205 ; H01L21/3213 ; H01L21/768 ; H01L21/285 ; H01L21/3105 ; H01L21/02

Abstract:
A method for manufacturing a thin film resistor (TFR) module in an integrated circuit (IC) structure may include forming a trench in a dielectric region; forming a TFR element in the trench, the TFR element including a laterally-extending TFR region and a TFR ridge extending upwardly from a laterally-extending TFR region; depositing at least one metal layer over the TFR element; and patterning the at least one metal layer and etching the at least one metal layer using a metal etch to define a pair of metal TFR heads over the TFR element, wherein the metal etch also removes at least a portion of the upwardly-extending TFR ridge. The method may also include forming at least one conductive TFR contact extending through the TFR element and in contact with a respective TFR head to thereby increase a conductive path between the respective TFR head and the TFR element.
Public/Granted literature
- US20190386091A1 Aluminum Compatible Thin-Film Resistor (TFR) and Manufacturing Methods Public/Granted day:2019-12-19
Information query
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