Invention Grant
- Patent Title: Static random-access memory with virtual banking architecture, and system and method including the same
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Application No.: US16191717Application Date: 2018-11-15
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Publication No.: US10665295B2Publication Date: 2020-05-26
- Inventor: Lava Kumar Pulluru , Parvinder Kumar Rana , Akash Kumar Gupta , Gayatri Nair
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5342e6b com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@34377d1e
- Main IPC: G11C11/419
- IPC: G11C11/419 ; G11C11/4097 ; G11C7/10 ; G11C7/12 ; G11C7/18 ; G11C8/12 ; G11C11/418

Abstract:
A static random-access memory (SRAM) system using a virtual banking architecture includes a processor communicatively coupled to an SRAM, and a plurality of circuits disposed in the SRAM and operated under control of the processor. The circuits include a divide circuit, a select circuit disposed in the divide circuit, and a local input/output circuit. The divide circuit divides a bank into first and second bit cell arrays, in which the first bit cell array and/or the second bit cell array includes at least one bit line. The select circuit is connected between the first and second bit cell arrays, and the select circuit selects one of the first and second bit cell arrays according to a predefined select logic. The local input/output circuit is connected to the select circuit and generates an output according to one or more predefined operations of the local input/output circuit.
Public/Granted literature
- US20190147944A1 STATIC RANDOM-ACCESS MEMORY WITH VIRTUAL BANKING ARCHITECTURE, AND SYSTEM AND METHOD INCLUDING THE SAME Public/Granted day:2019-05-16
Information query
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