Invention Grant
- Patent Title: Passivation material for a pillar adjacent a trench
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Application No.: US16167016Application Date: 2018-10-22
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Publication No.: US10665665B2Publication Date: 2020-05-26
- Inventor: Guangjun Yang , Mohd Kamran Akhtar
- Applicant: Micron Technology, Inc.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L49/02 ; H01L21/3065 ; H01L21/02 ; H01L27/108 ; H01L23/31 ; H01L23/29 ; H01L21/311 ; H01L21/67
Abstract:
Systems, apparatuses, and methods related to passivation material for a pillar adjacent a trench are described. An example method includes forming a passivation material on a top region of a pillar adjacent a trench of a semiconductor device and removing a first portion of the passivation material to form, on a remaining second portion of the passivation material, a surface that is coplanar with an underlying sidewall of the pillar. The example method further includes removing a portion of a substrate material at a bottom region of the trench and removing the remaining second portion of the passivation material from the top region.
Public/Granted literature
- US20200127080A1 PASSIVATION MATERIAL FOR A PILLAR ADJACENT A TRENCH Public/Granted day:2020-04-23
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