Invention Grant
- Patent Title: Semiconductor device and method of producing semiconductor device
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Application No.: US16158611Application Date: 2018-10-12
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Publication No.: US10672720B2Publication Date: 2020-06-02
- Inventor: Tomoyuki Yamada , Fumio Ushida , Shigetoshi Takeda , Tomoharu Awaya , Koji Banno , Takayoshi Minami
- Applicant: SOCIONEXT INC.
- Applicant Address: JP Yokohama
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@23166a22 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3585e6b9
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/78 ; H01L23/58 ; H01L23/522 ; H01L23/528 ; H01L23/532
Abstract:
A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.
Public/Granted literature
- US20190051620A1 SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE Public/Granted day:2019-02-14
Information query
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