公开(公告)号：US10672720B2

公开(公告)日：2020-06-02

申请号：US16158611

申请日：2018-10-12

Applicant: SOCIONEXT INC.

Inventor： Tomoyuki Yamada ,  Fumio Ushida ,  Shigetoshi Takeda ,  Tomoharu Awaya ,  Koji Banno ,  Takayoshi Minami

IPC: H01L23/00 ,  H01L21/78 ,  H01L23/58 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.

公开(公告)号：US20180102327A1

公开(公告)日：2018-04-12

申请号：US15837725

申请日：2017-12-11

Applicant: SOCIONEXT INC.

Inventor： Tomoyuki Yamada ,  Fumio Ushida ,  Shigetoshi Takeda ,  Tomoharu Awaya ,  Koji Banno ,  Takayoshi Minami

IPC: H01L23/00 ,  H01L23/58 ,  H01L21/78 ,  H01L23/532 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L23/562 ,  H01L21/78 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.

公开(公告)号：US10147687B2

公开(公告)日：2018-12-04

申请号：US15837725

申请日：2017-12-11

Applicant: SOCIONEXT INC.

Inventor： Tomoyuki Yamada ,  Fumio Ushida ,  Shigetoshi Takeda ,  Tomoharu Awaya ,  Koji Banno ,  Takayoshi Minami

IPC: H01L23/00 ,  H01L21/78 ,  H01L23/58 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.

公开(公告)号：US20160116533A1

公开(公告)日：2016-04-28

申请号：US14921242

申请日：2015-10-23

Applicant: FUJITSU LIMITED ,  Socionext Inc.

Inventor： Tsutomu ISHIDA ,  Koji Banno

IPC: G01R31/3177

CPC classification number: G01R31/318342 ,  G01R31/31703

Abstract: A diagnostic apparatus is disclosed, which includes a processor configured to extract, from a plurality of components included in an integrated circuit to be diagnosed, a failure candidate based on test results obtained from actual operations of the integrated circuit, the actual operations being implemented by individually applying a plurality of types of test patterns to the integrated circuit, extract, from a plurality of pass patterns of the test patterns, a pass pattern with which a signal is transmitted to the failure candidate, based on log data obtained from simulations with the test patterns, the test results of the plurality of pass patterns being normal, and execute, using a fail pattern of the test patterns and the extracted pass patterns, a failure simulation assuming that the failure candidate is failed, the test result of the fail pattern being abnormal.

Abstract translation: 公开了一种诊断装置，其包括：处理器，被配置为根据从集成电路的实际操作获得的测试结果，从包括在待诊断的集成电路中的多个组件中提取故障候选者，所述实际操作由 将多种类型的测试图案单独地应用于集成电路，从多个测试图案的通过图案中提取通过模式将信号发送到故障候选者的通过图案，基于从具有 测试模式，多个通过模式的测试结果正常，并且使用测试模式和提取的通过模式的故障模式执行假设故障候选失败的故障模拟，故障模式的测试结果 异常

公开(公告)号：US20170012004A1

公开(公告)日：2017-01-12

申请号：US15274787

申请日：2016-09-23

Applicant: SOCIONEXT INC.

Inventor： Tomoyuki Yamada ,  Fumio Ushida ,  Shigetoshi Takeda ,  Tomoharu Awaya ,  Koji Banno ,  Takayoshi Minami

IPC: H01L23/00 ,  H01L23/58 ,  H01L23/532 ,  H01L23/528 ,  H01L23/522

CPC classification number: H01L23/562 ,  H01L21/78 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.

Abstract translation: 设置在半导体基板上的半导体器件包括：包含元件的元件区域，围绕元件区域的防潮框架;设置在防潮框架和半导体器件的外周边缘之间以及半导体衬底上的绝缘层 ，沿着外周缘延伸并设置在绝缘层中的第一金属线和设置在绝缘层中的槽。

公开(公告)号：US20190051620A1

公开(公告)日：2019-02-14

申请号：US16158611

申请日：2018-10-12

Applicant: SOCIONEXT INC.

Inventor： Tomoyuki Yamada ,  Fumio Ushida ,  Shigetoshi Takeda ,  Tomoharu Awaya ,  Koji Banno ,  Takayoshi Minami

IPC: H01L23/00 ,  H01L23/532 ,  H01L23/528 ,  H01L21/78 ,  H01L23/522 ,  H01L23/58

CPC classification number: H01L23/562 ,  H01L21/78 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.

公开(公告)号：US09881878B2

公开(公告)日：2018-01-30

申请号：US15274787

申请日：2016-09-23

Applicant: SOCIONEXT INC.

Inventor： Tomoyuki Yamada ,  Fumio Ushida ,  Shigetoshi Takeda ,  Tomoharu Awaya ,  Koji Banno ,  Takayoshi Minami

IPC: H01L23/00 ,  H01L21/78 ,  H01L23/58 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L23/562 ,  H01L21/78 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.