Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15794286Application Date: 2017-10-26
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Publication No.: US10672742B2Publication Date: 2020-06-02
- Inventor: Zhi-Qiang Wu , Chun-Fu Cheng , Chung-Cheng Wu , Yi-Han Wang , Chia-Wen Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L25/065 ; H01L21/02 ; H01L25/04 ; H01L29/423 ; H01L29/10 ; H01L29/08 ; H01L29/775 ; H01L29/786 ; H01L29/06 ; H01L27/06 ; H01L29/40 ; H01L27/092 ; H01L29/78 ; H01L21/8238 ; B82Y99/00 ; B82Y10/00
Abstract:
A device includes a substrate, a stacked structure and a first gate stack. The stacked structure includes a plurality of first semiconductor layers and a plurality of second semiconductor layers alternately stacked over the substrate. One of the first semiconductor layers has a height greater than a height of one the second semiconductor layers. The first gate stack wraps around the stacked structure.
Public/Granted literature
- US20190131274A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-05-02
Information query
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