Invention Grant
- Patent Title: Multi-pass patterning using nonreflecting radiation lithography on an underlying grating
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Application No.: US15504469Application Date: 2014-09-22
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Publication No.: US10678137B2Publication Date: 2020-06-09
- Inventor: Manish Chandhok , Todd R. Younkin , Sang H. Lee , Charles H. Wallace
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- International Application: PCT/US2014/056761 WO 20140922
- International Announcement: WO2016/048264 WO 20160331
- Main IPC: H01L21/768
- IPC: H01L21/768 ; G03F7/20 ; H01L21/033 ; H01L21/311 ; H01L21/027 ; G03F7/00 ; G03F7/09
Abstract:
Techniques related to multi-pass patterning lithography, device structures, and devices formed using such techniques are discussed. Such techniques include exposing a resist layer disposed over a grating pattern with non-reflecting radiation to generate an enhanced exposure portion within a trench of the grating pattern and developing the resist layer to form a pattern layer having a pattern structure within the trench of the grating pattern.
Public/Granted literature
- US20170235228A1 MULTI-PASS PATTERNING USING NONREFLECTING RADIATION LITHOGRAPHY ON AN UNDERLYING GRATING Public/Granted day:2017-08-17
Information query
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