- 专利标题: Integrated device and method of forming the same
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申请号: US16020132申请日: 2018-06-27
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公开(公告)号: US10678991B2公开(公告)日: 2020-06-09
- 发明人: Chun-Yao Ku , Wen-Hao Chen , Ming-Tao Yu , Shao-Huan Wang , Jyun-Hao Chang
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: WPAT, P.C., Intellectual Property Attorneys
- 代理商 Anthony King
- 主分类号: G06F17/50
- IPC分类号: G06F17/50 ; G06F30/398 ; G06F30/394 ; G06F119/10
摘要:
A method of forming an integrated device includes: pre-storing a plurality of via pillars in a storage tool; arranging a first via pillar selected from the plurality of via pillars to electrically connect to a circuit cell in a first circuit; analyzing electromigration (EM) information of the first circuit to determine if the first via pillar induces an EM phenomenon; arranging a second via pillar selected from the plurality of via pillars to replace the first via pillar of the circuit cell to generate a second circuit when the first via pillar induces the EM phenomenon; and generating the integrated device according to the second circuit.
公开/授权文献
- US20200004917A1 INTEGRATED DEVICE AND METHOD OF FORMING THE SAME 公开/授权日:2020-01-02
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