Invention Grant
- Patent Title: Field-effect transistors with a grown silicon-germanium channel
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Application No.: US16052140Application Date: 2018-08-01
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Publication No.: US10680065B2Publication Date: 2020-06-09
- Inventor: George R. Mulfinger , Timothy J. McArdle , Jody Fronheiser , El Mehdi Bazizi , Yi Qi
- Applicant: GLOBALFOUNDRIES Inc.
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Agency: Thompson Hine LLP
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/08 ; H01L27/12 ; H01L29/165 ; H01L21/84 ; H01L21/02 ; H01L21/308 ; H01L21/306 ; H01L21/3065 ; H01L21/027 ; H01L29/786
Abstract:
Device structures for a field-effect transistor and methods of forming a device structure for a field-effect transistor. A channel region is arranged laterally between a first source/drain region and a second source/drain region. The channel region includes a first semiconductor layer and a second semiconductor layer arranged over the first semiconductor layer. A gate structure is arranged over the second semiconductor layer of the channel region The first semiconductor layer is composed of a first semiconductor material having a first carrier mobility. The second semiconductor layer is composed of a second semiconductor material having a second carrier mobility that is greater than the first carrier mobility of the first semiconductor layer.
Public/Granted literature
- US20200044029A1 FIELD-EFFECT TRANSISTORS WITH A GROWN SILICON-GERMANIUM CHANNEL Public/Granted day:2020-02-06
Information query
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