- 专利标题: Method and apparatus for using back gate biasing for power amplifiers for millimeter wave devices
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申请号: US16367113申请日: 2019-03-27
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公开(公告)号: US10680557B2公开(公告)日: 2020-06-09
- 发明人: Shafiullah Syed , Abdellatif Bellaouar , Chi Zhang
- 申请人: GLOBALFOUNDRIES INC.
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Williams Morgan, P.C.
- 主分类号: H03F1/02
- IPC分类号: H03F1/02 ; H03F3/195 ; H04B1/04 ; H03F3/45 ; H03F3/217 ; H03F1/14 ; H01L21/84 ; H01L27/12
摘要:
An apparatus, comprising an input transformer; a first differential transistor pair configured to receive a first back gate bias voltage; a second differential transistor pair configured to receive a second back gate bias voltage; a cross-coupled neutralization cap comprising PMOS or NMOS transistors and configured to receive a third back gate bias voltage; and an output transformer. A method of fixing at least one back gate bias voltage to impart a desired capacitance to the transistors of at least one of the first differential transistor pair, the second differential transistor pair, or the neutralization cap. The apparatus and method may provide a power amplifier having improved linearity and efficiency.
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