-
公开(公告)号：US10790789B2
公开(公告)日：2020-09-29
申请号：US16550385
申请日：2019-08-26
申请人： GLOBALFOUNDRIES INC.
发明人： See T. Lee , Abdellatif Bellaouar
摘要： In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.
-
公开(公告)号：US20200028499A1
公开(公告)日：2020-01-23
申请号：US15966747
申请日：2018-04-30
申请人： GLOBALFOUNDRIES INC.
摘要： An apparatus for performing a frequency multiplication of an mm-wave wave signal is provided. The apparatus includes a first differential circuit that is capable of receiving a 0° phase component of an input signal and a 180° phase component of the input signal having a first frequency. The first differential circuit provides a first output signal that is twice the frequency and is in −phase(0°) based on the 0° the 180° phase components of the input signal. The apparatus also includes a second differential circuit that is capable of receiving a 90° phase component of the input signal and a 270° phase component of the input signal, and provide a first output signal that is twice the frequency and out of phase(180°). The apparatus also includes a differential transformer that is configured to receive the first output signal and the second output signal. The differential transformer is configured to provide a differential output signal that has a second frequency that is twice the first frequency.
-
公开(公告)号：US20190288646A1
公开(公告)日：2019-09-19
申请号：US16428842
申请日：2019-05-31
申请人： GLOBALFOUNDRIES INC.
发明人： See Taur Lee , Abdellatif Bellaouar
摘要： We disclose apparatus which may provide power amplification in millimeter-wave devices with reduced size and reduced power consumption, and methods of using such apparatus. One such apparatus comprises an input transformer; a first differential pair of injection transistors comprising a first transistor and a second transistor; a first back gate voltage source configured to provide a first back gate voltage to the first transistor; a second back gate voltage source configured to provide a second back gate voltage to the second transistor; a second differential pair of oscillator core transistors comprising a third transistor and a fourth transistor, wherein the third transistor and the fourth transistor are cross-coupled; a third back gate voltage source configured to provide a third back gate voltage to the third transistor; a fourth back gate voltage source configured to provide a fourth back gate voltage to the fourth transistor; and an output transformer.
-
公开(公告)号：US10355646B2
公开(公告)日：2019-07-16
申请号：US15967172
申请日：2018-04-30
申请人： GLOBALFOUNDRIES INC.
发明人： See Taur Lee , Abdellatif Bellaouar
摘要： We disclose apparatus which may provide power amplification in millimeter-wave devices with reduced size and reduced power consumption, and methods of using such apparatus. One such apparatus comprises an input transformer; a first differential pair of injection transistors comprising a first transistor and a second transistor; a first back gate voltage source configured to provide a first back gate voltage to the first transistor; a second back gate voltage source configured to provide a second back gate voltage to the second transistor; a second differential pair of oscillator core transistors comprising a third transistor and a fourth transistor, wherein the third transistor and the fourth transistor are cross-coupled; a third back gate voltage source configured to provide a third back gate voltage to the third transistor; a fourth back gate voltage source configured to provide a fourth back gate voltage to the fourth transistor; and an output transformer.
-
公开(公告)号：US20190190446A1
公开(公告)日：2019-06-20
申请号：US15966661
申请日：2018-04-30
申请人： GLOBALFOUNDRIES INC.
CPC分类号： H03B1/02 , H01P5/16 , H03B5/1203 , H03H11/36
摘要： A CMOS gain element is disclosed herein. Also disclosed herein are splitters, comprising the CMOS gain element, and local oscillator distribution circuitry comprising the splitters and the CMOS gain elements. Semiconductor devices comprising the local oscillator distribution circuitry may have smaller footprints and reduced power consumption relative to prior art devices.
-
6.发明授权公开(公告)号：US10291183B1
公开(公告)日：2019-05-14
申请号：US15908678
申请日：2018-02-28
申请人： GLOBALFOUNDRIES INC.
发明人： Shafiullah Syed , Abdellatif Bellaouar , Chi Zhang
IPC分类号： H03F1/02 , H03F3/195 , H03F3/21 , H03F3/45 , H03F1/22 , H04B1/04 , H03F3/217 , H01L21/84 , H01L27/12
摘要： An apparatus, comprising an input transformer; a first differential transistor pair configured to receive a first back gate bias voltage; a second differential transistor pair configured to receive a second back gate bias voltage; a cross-coupled neutralization cap comprising PMOS or NMOS transistors and configured to receive a third back gate bias voltage; and an output transformer. A method of fixing at least one back gate bias voltage to impart a desired capacitance to the transistors of at least one of the first differential transistor pair, the second differential transistor pair, or the neutralization cap. The apparatus and method may provide a power amplifier having improved linearity and efficiency.
-
公开(公告)号：US20180358962A1
公开(公告)日：2018-12-13
申请号：US15616527
申请日：2017-06-07
申请人： GLOBALFOUNDRIES Inc.
发明人： Abdellatif Bellaouar
CPC分类号： H03K17/161 , H01L21/84 , H01L23/66 , H01L27/1203 , H01L28/20 , H01L28/40 , H01L29/7831 , H01L2223/6677 , H03F3/195 , H03F3/211 , H03F3/213 , H03F2200/18 , H03F2200/294 , H03F2200/451 , H04B1/44
摘要： Electronic circuits with a switch and methods for operating a switch in an electronic circuit. A first amplifier is coupled by a first path with an antenna. A second amplifier is coupled by a second path with the antenna. A transistor is coupled with the first path at a node. The first transistor includes a back gate. A back-gate bias circuit is coupled with the back gate of the first transistor. The back-gate bias circuit is configured to supply a bias voltage to the back gate of the first transistor that lowers a threshold voltage of the transistor.
-
公开(公告)号：US20220200636A1
公开(公告)日：2022-06-23
申请号：US17556624
申请日：2021-12-20
申请人： GLOBALFOUNDRIES INC.
摘要： We disclose multiband receivers for millimeter-wave devices, which may have reduced size and/or reduced power consumption. One multiband receiver comprises a first band path comprising a first passive mixer configured to receive a first input RF signal having a first frequency and to be driven by a first local oscillator signal having a frequency about ⅔ the first frequency; a second band path comprising a second passive mixer configured to receive a second input RF signal having a second frequency and to be driven by a second local oscillator signal having a frequency about ⅔ the second frequency; and a base band path comprising a third passive mixer configured to receive intermediate RF signals during a duty cycle and to be driven by a third local oscillator signal having a frequency about ⅓ the first frequency or about ⅓ the second frequency during the duty cycle.
-
9.发明授权公开(公告)号：US10680557B2
公开(公告)日：2020-06-09
申请号：US16367113
申请日：2019-03-27
申请人： GLOBALFOUNDRIES INC.
发明人： Shafiullah Syed , Abdellatif Bellaouar , Chi Zhang
摘要： An apparatus, comprising an input transformer; a first differential transistor pair configured to receive a first back gate bias voltage; a second differential transistor pair configured to receive a second back gate bias voltage; a cross-coupled neutralization cap comprising PMOS or NMOS transistors and configured to receive a third back gate bias voltage; and an output transformer. A method of fixing at least one back gate bias voltage to impart a desired capacitance to the transistors of at least one of the first differential transistor pair, the second differential transistor pair, or the neutralization cap. The apparatus and method may provide a power amplifier having improved linearity and efficiency.
-
公开(公告)号：US20190379338A1
公开(公告)日：2019-12-12
申请号：US16550385
申请日：2019-08-26
申请人： GLOBALFOUNDRIES INC.
发明人： See T. Lee , Abdellatif Bellaouar
摘要： In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.
-
-
-
-
-
-
-
-
-
搜索结果
33 条记录 (耗时 0.021 秒)
