Invention Grant
- Patent Title: Magnetoresistance effect element
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Application No.: US16277045Application Date: 2019-02-15
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Publication No.: US10685671B2Publication Date: 2020-06-16
- Inventor: Tomoyuki Sasaki , Katsuyuki Nakada , Tatsuo Shibata
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@accb0b4
- Main IPC: G11B5/39
- IPC: G11B5/39 ; H01L43/08 ; H01L43/10 ; H01L27/105 ; H01F10/32 ; G11C11/16 ; H01F10/193 ; H01L27/22 ; H01L29/82 ; H01F1/40
Abstract:
A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula AGa2Ox (0
Public/Granted literature
- US10720178B2 Magnetoresistance effect element Public/Granted day:2020-07-21
Information query
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