公开(公告)号：US12288576B2

公开(公告)日：2025-04-29

申请号：US18373642

申请日：2023-09-27

Applicant: TDK CORPORATION

Inventor： Shinto Ichikawa ,  Kazuumi Inubushi ,  Katsuyuki Nakada

IPC: G11B5/39 ,  G01R33/09 ,  G11C11/16 ,  H01F10/16 ,  H01F10/193 ,  H01F10/26 ,  H01F10/32 ,  H03H7/12 ,  H10B61/00

Abstract: A magnetoresistance effect element having a large MR ratio is provided.
This magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is closer to the nonmagnetic layer than the second layer. The first layer has a Heusler alloy containing at least partially crystallized Co. The second layer contains a material different from the Heusler alloy and has at least a partially crystallized ferromagnetic material. The first layer and the second layer have added first atoms. The first atom is any one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.

公开(公告)号：US12217775B2

公开(公告)日：2025-02-04

申请号：US18240657

申请日：2023-08-31

Applicant: TDK CORPORATION

Inventor： Kazuumi Inubushi ,  Katsuyuki Nakada ,  Tetsuya Uemura

IPC: G11B5/39 ,  G01R33/09 ,  G11C11/16 ,  H01F10/193 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1): Co2FeαXβ  (1) (in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and α and β represent numbers that satisfy 2.3≤α+β, α

公开(公告)号：US11840757B2

公开(公告)日：2023-12-12

申请号：US17348238

申请日：2021-06-15

Applicant: TDK CORPORATION

Inventor： Tsuyoshi Suzuki ,  Katsuyuki Nakada ,  Tomoyuki Sasaki

IPC: C23C14/54 ,  C23C16/52 ,  G06F30/27 ,  C23C14/34 ,  G06F111/10

CPC classification number: C23C14/54 ,  C23C14/34 ,  C23C16/52 ,  G06F30/27 ,  G06F2111/10

Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.

公开(公告)号：US11056639B2

公开(公告)日：2021-07-06

申请号：US16412727

申请日：2019-05-15

Applicant: TDK CORPORATION

Inventor： Katsuyuki Nakada

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10

Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a tunnel barrier layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer is an oxide having a spinel structure, and the tunnel barrier layer includes a magnetic element as an additional element.

公开(公告)号：US10964341B2

公开(公告)日：2021-03-30

申请号：US16999611

申请日：2020-08-21

Applicant: TDK CORPORATION

Inventor： Kazuumi Inubushi ,  Katsuyuki Nakada

IPC: G11B5/39 ,  H01L43/10 ,  G01R33/09 ,  H03B15/00 ,  H01L43/12 ,  H01L43/08 ,  G11B5/31 ,  H03H2/00

Abstract: A nonmagnetic spacer layer in a magnetoresistive effect element includes a nonmagnetic metal layer that is formed of Ag and at least one of a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer. The first insertion layer and the second insertion layer include an Fe alloy that is expressed by FeγX1-γ. Here, X denotes one or more elements selected from a group consisting of O, Al, Si, Ga, Mo, Ag, and Au, and γ satisfies 0

公开(公告)号：US10685671B2

公开(公告)日：2020-06-16

申请号：US16277045

申请日：2019-02-15

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Katsuyuki Nakada ,  Tatsuo Shibata

IPC: G11B5/39 ,  H01L43/08 ,  H01L43/10 ,  H01L27/105 ,  H01F10/32 ,  G11C11/16 ,  H01F10/193 ,  H01L27/22 ,  H01L29/82 ,  H01F1/40

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula AGa2Ox (0

公开(公告)号：US10665776B2

公开(公告)日：2020-05-26

申请号：US16275947

申请日：2019-02-14

Applicant: TDK CORPORATION ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Shinto Ichikawa ,  Katsuyuki Nakada ,  Seiji Mitani ,  Hiroaki Sukegawa ,  Kazuhiro Hono ,  Tadakatsu Ohkubo

IPC: H01L43/10 ,  H01L43/12 ,  H01F10/32

Abstract: Provided is a magnetoresistance effect element in which a tunnel barrier layer stably has a cation disordered spinel structure. This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. In addition, the tunnel barrier layer is an oxide of MgxAl1-x (0≤x

公开(公告)号：US10255934B2

公开(公告)日：2019-04-09

申请号：US15554066

申请日：2016-03-29

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Katsuyuki Nakada ,  Tatsuo Shibata

IPC: G11B5/39 ,  H01L43/08 ,  H01L43/10 ,  H01L27/105 ,  G11C11/16 ,  H01F10/193 ,  H01L27/22 ,  H01L29/82 ,  H01F1/40

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula AGa2Ox (0

公开(公告)号：US10109788B2

公开(公告)日：2018-10-23

申请号：US15559195

申请日：2016-03-28

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Tatsuo Shibata ,  Katsuyuki Nakada ,  Yoshitomo Tanaka

IPC: H01L45/00 ,  H01L43/08 ,  G11C11/16 ,  H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01L43/10

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

公开(公告)号：US12278033B2

公开(公告)日：2025-04-15

申请号：US17981112

申请日：2022-11-04

Applicant: TDK CORPORATION

Inventor： Shinto Ichikawa ,  Katsuyuki Nakada ,  Kazuumi Inubushi

IPC: H01F10/32 ,  G01R33/09

Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer. The nonmagnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy layer. The nonmagnetic layer includes a first region and a second region in a plane. Both of the first region and the second region are formed of a metal. The second region is different in constituent material from the first region. The second region has a crystal structure of a body-centered cubic lattice structure (bcc).