Invention Grant
- Patent Title: Methods, apparatus, and manufacturing system for self-aligned patterning of contacts in a semiconductor device
-
Application No.: US16112511Application Date: 2018-08-24
-
Publication No.: US10685881B2Publication Date: 2020-06-16
- Inventor: Hui Zang , Guowei Xu , Haiting Wang
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/768 ; H01L29/78 ; H01L29/06 ; H01L29/49 ; H01L23/535 ; H01L23/532 ; H01L29/66

Abstract:
A method, apparatus, and manufacturing system are disclosed for a fin field effect transistor having a reduced risk of short circuits between a gate and a source/drain contact. In one embodiment, we disclose a semiconductor device including a fin structure comprising a fin body, source/drain regions, and a metal formation disposed above the source/drain regions, wherein the metal formation has a first height; and a gate structure between the source/drain regions, wherein each gate structure comprises spacers in contact with the metal formation, wherein the spacers have a second height less than the first height, a metal plug between the spacers and below the second height, and a T-shaped cap above the metal plug and having the first height.
Public/Granted literature
Information query
IPC分类: