- 专利标题： Method of making semiconductor ferroelectric memory element, and semiconductor ferroelectric memory transistor
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申请号： US15493995申请日： 2017-04-21
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公开(公告)号： US10686043B2公开(公告)日： 2020-06-16
- 发明人: Shigeki Sakai , Mitsue Takahashi , Masaki Kusuhara , Masayuki Toda , Masaru Umeda , Yoshikazu Sasaki
- 申请人： National Institute of Advanced Industrial Science and Technology , WACOM R&D Corporation
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,WACOM R&D CORPORATION
- 当前专利权人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,WACOM R&D CORPORATION
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： Young & Thompson
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5ec71de8
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; H01L21/28 ; H01L29/66 ; G11C11/22 ; H01L21/02 ; H01L29/78 ; H01L29/51 ; H01L27/1159 ; H01L29/49
摘要：
[Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm
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