Invention Grant
- Patent Title: Method of making semiconductor ferroelectric memory element, and semiconductor ferroelectric memory transistor
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Application No.: US15493995Application Date: 2017-04-21
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Publication No.: US10686043B2Publication Date: 2020-06-16
- Inventor: Shigeki Sakai , Mitsue Takahashi , Masaki Kusuhara , Masayuki Toda , Masaru Umeda , Yoshikazu Sasaki
- Applicant: National Institute of Advanced Industrial Science and Technology , WACOM R&D Corporation
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,WACOM R&D CORPORATION
- Current Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,WACOM R&D CORPORATION
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Young & Thompson
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5ec71de8
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/28 ; H01L29/66 ; G11C11/22 ; H01L21/02 ; H01L29/78 ; H01L29/51 ; H01L27/1159 ; H01L29/49
Abstract:
[Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm
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