公开(公告)号：US09020332B2

公开(公告)日：2015-04-28

申请号：US14520537

申请日：2014-10-22

Applicant: WACOM R&D Corporation ,  Masayuki Toda

Inventor： Masayuki Toda ,  Masaru Umeda

IPC: A01G13/06 ,  A61M16/00 ,  C23C16/448 ,  B01B1/00

CPC classification number: B01B1/005 ,  C23C16/4481

Abstract: Provided is a vaporizer that can efficiently cool a carrier gas, improve the effect of preventing a material from being clogged near the outlet port of a gas passage, contribute to prolonging the timing of maintenance and improving operating efficiency, and exert more uniform dispersing effect. A vaporizer includes: a center rod inserted into a carrier gas introduction hole formed in a disperser to form the gas passage in cooperation with the inner wall of the carrier gas introduction hole; a cooling part disposed on the outer circumferential side of the carrier gas introduction hole in the disperser to cool the inside of the gas passage; a cooling member insertion hole formed across almost the entire length of the center rod along the axial direction of the center rod; and a cooling member disposed in the inside of the cooling member insertion hole to cool the center rod.

Abstract translation: 本发明提供一种能够有效地冷却载气的蒸发器，提高防止材料在气体通路的出口附近堵塞的效果，有助于延长维护时间，提高作业效率，发挥更均匀的分散效果。 蒸发器包括：插入到分散器中形成的载气导入孔中的中心杆，与载气引入孔的内壁配合形成气体通道; 冷却部，其设置在所述分散器中的所述载气导入孔的外周侧，以冷却所述气体通道的内部; 沿所述中心杆的轴向方向跨过所述中心杆的整个长度形成的冷却构件插入孔; 以及设置在冷却部件插入孔的内部以冷却中心杆的冷却部件。

公开(公告)号：US20150053137A1

公开(公告)日：2015-02-26

申请号：US14520537

申请日：2014-10-22

Applicant: Masayuki TODA ,  WACOM R&D Corporation

Inventor： Masayuki TODA ,  Masaru UMEDA

IPC: C23C16/448

CPC classification number: B01B1/005 ,  C23C16/4481

Abstract: Provided is a vaporizer that can efficiently cool a carrier gas, improve the effect of preventing a material from being clogged near the outlet port of a gas passage, contribute to prolonging the timing of maintenance and improving operating efficiency, and exert more uniform dispersing effect. A vaporizer includes: a center rod inserted into a carrier gas introduction hole formed in a disperser to form the gas passage in cooperation with the inner wall of the carrier gas introduction hole; a cooling part disposed on the outer circumferential side of the carrier gas introduction hole in the disperser to cool the inside of the gas passage; a cooling member insertion hole formed across almost the entire length of the center rod along the axial direction of the center rod; and a cooling member disposed in the inside of the cooling member insertion hole to cool the center rod.

Abstract translation: 本发明提供一种能够有效地冷却载气的蒸发器，提高防止材料在气体通路的出口附近堵塞的效果，有助于延长维护时间，提高作业效率，发挥更均匀的分散效果。 蒸发器包括：插入到分散器中形成的载气导入孔中的中心杆，与载气引入孔的内壁配合形成气体通道; 冷却部，其设置在所述分散器中的所述载气导入孔的外周侧，以冷却所述气体通道的内部; 沿所述中心杆的轴向方向跨过所述中心杆的整个长度形成的冷却构件插入孔; 以及设置在冷却部件插入孔的内部以冷却中心杆的冷却部件。

公开(公告)号：US20180130909A1

公开(公告)日：2018-05-10

申请号：US15674813

申请日：2017-08-11

Applicant: National Institute of Advanced Industrial Science and Technology ,  WACOM R&D Corporation

Inventor： Shigeki SAKAI ,  Mitsue TAKAHASHI ,  Masaki KUSUHARA ,  Masayuki TODA ,  Masaru UMEDA

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/51 ,  H01L21/28 ,  C23C16/40 ,  H01L21/02

CPC classification number: H01L29/78391 ,  C23C16/40 ,  H01L21/02197 ,  H01L21/02271 ,  H01L27/1159 ,  H01L29/40111 ,  H01L29/516 ,  H01L29/6684

Abstract: A ferroelectric device and a manufacturing method are provided. While holding a nonvolatile memory retention capability and a multiple rewriting endurance as the distinctive features of a ferroelectric device, the disclosed ferroelectric device is wider in memory window and more adaptively made microfiner than a conventional ferroelectric device that has used a ferroelectric mainly constituted of Sr—Bi—Ta—O as an oxide of strontium, bismuth and tantalum. Directly on or with intermediary of an insulator on a semiconductor there are layered a first ferroelectric and a conductor to form a gate stack, the first ferroelectric being mainly constituted of Sr—Ca—Bi—Ta—O as an oxide of strontium, calcium, bismuth and tantalum and being built up by a metal organic vapor deposition technique from a suitable film-forming raw material. The gate stack is heat-treated to cause the first ferroelectric to develop its ferroelectricity.

公开(公告)号：US11335783B2

公开(公告)日：2022-05-17

申请号：US16870308

申请日：2020-05-08

Applicant: National Institute of Advanced Industrial Science and Technology ,  WACOM R&D Corporation

Inventor： Shigeki Sakai ,  Mitsue Takahashi ,  Masaki Kusuhara ,  Masayuki Toda ,  Masaru Umeda ,  Yoshikazu Sasaki

IPC: H01L29/40 ,  H01L21/28 ,  H01L29/66 ,  G11C11/22 ,  H01L21/02 ,  H01L29/78 ,  H01L29/51 ,  H01L27/1159 ,  H01L29/49

Abstract: A FeFET and a method of its manufacture are provided, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm

公开(公告)号：US11069713B2

公开(公告)日：2021-07-20

申请号：US16315784

申请日：2017-07-03

Applicant: National Institute of Advanced Industrial Science and Technology ,  WACOM R&D Corporation

Inventor： Mitsue Takahashi ,  Shigeki Sakai ,  Masaki Kusuhara ,  Masayuki Toda ,  Masaru Umeda ,  Yoshikazu Sasaki

IPC: H01L27/1159 ,  H01L29/78 ,  H01L21/28 ,  H01L21/311 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L27/11587 ,  H01L21/033

Abstract: A semiconductor memory element is provided including a laminated structure, in which a memory member and a conductor are superposed on a semiconductor substrate. The memory member has a bottom surface in contact with the semiconductor substrate, an upper surface in contact with the conductor, and side surfaces, which are in contact with and surrounded by a partition wall; the bottom surface of the memory member has a width of equal to or not more than 100 nm; a shortest distance between the conductor and the semiconductor substrate is twice or more of the width of the bottom surface of the memory member; the side surface of the memory member has a width, which is either the same as the width of the bottom surface and constant at any position above the bottom surface, or the widest at a position other than the bottom surface and above the bottom surface.

公开(公告)号：US20170309488A1

公开(公告)日：2017-10-26

申请号：US15493995

申请日：2017-04-21

Applicant: National Institute of Advanced Industrial Science and Technology ,  WACOM R&D Corporation

Inventor： Shigeki SAKAI ,  Mitsue TAKAHASHI ,  Masaki KUSUHARA ,  Masayuki TODA ,  Masaru UMEDA ,  Yoshikazu SASAKI

IPC: H01L21/28 ,  H01L21/02 ,  H01L29/51 ,  H01L29/78 ,  H01L29/49 ,  H01L27/1159

CPC classification number: H01L29/40111 ,  G11C11/223 ,  H01L21/02181 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02356 ,  H01L27/1159 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6684 ,  H01L29/78391

Abstract: [Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm

公开(公告)号：US20190273086A1

公开(公告)日：2019-09-05

申请号：US16315784

申请日：2017-07-03

Applicant: National Institute of Advanced Industrial Science and Technology ,  WACOM R&D Corporation

Inventor： Mitsue TAKAHASHI ,  Shigeki SAKAI ,  Masaki KUSUHARA ,  Masayuki TODA ,  Masaru UMEDA ,  Yoshikazu SASAKI

IPC: H01L27/1159 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L21/28 ,  H01L21/311 ,  H01L29/66

Abstract: A semiconductor memory element is provided including a laminated structure, in which a memory member and a conductor are superposed on a semiconductor substrate. The memory member has a bottom surface in contact with the semiconductor substrate, an upper surface in contact with the conductor, and side surfaces, which are in contact with and surrounded by a partition wall; the bottom surface of the memory member has a width of equal to or not more than 100 nm; a shortest distance between the conductor and the semiconductor substrate is twice or more of the width of the bottom surface of the memory member; the side surface of the memory member has a width, which is either the same as the width of the bottom surface and constant at any position above the bottom surface, or the widest at a position other than the bottom surface and above the bottom surface.

公开(公告)号：US09108120B2

公开(公告)日：2015-08-18

申请号：US14520457

申请日：2014-10-22

Applicant: WACOM R&D Corporation

Inventor： Masayuki Toda ,  Masaru Umeda

IPC: A01G13/06 ,  A61M16/00 ,  C23C16/448 ,  B01B1/00

CPC classification number: B01B1/005 ,  C23C16/4481

Abstract: Provided is a vaporizer that can efficiently cool a carrier gas, improve the effect of preventing a material from being clogged near the outlet port of a gas passage, contribute to prolonging the timing of maintenance and improving operating efficiency, and exert more uniform dispersing effect. A vaporizer includes: a center rod inserted into a carrier gas introduction hole formed in a disperser to form the gas passage in cooperation with the inner wall of the carrier gas introduction hole; a cooling part disposed on the outer circumferential side of the carrier gas introduction hole in the disperser to cool the inside of the gas passage; a cooling member insertion hole formed across almost the entire length of the center rod along the axial direction of the center rod; and a cooling member disposed in the inside of the cooling member insertion hole to cool the center rod.

Abstract translation: 本发明提供一种能够有效地冷却载气的蒸发器，提高防止材料在气体通路的出口附近堵塞的效果，有助于延长维护时间，提高作业效率，发挥更均匀的分散效果。 蒸发器包括：插入到分散器中形成的载气导入孔中的中心杆，与载气引入孔的内壁配合形成气体通道; 冷却部，其设置在所述分散器中的所述载气导入孔的外周侧，以冷却所述气体通道的内部; 沿所述中心杆的轴向方向跨过所述中心杆的整个长度形成的冷却构件插入孔; 以及设置在冷却部件插入孔的内部以冷却中心杆的冷却部件。

公开(公告)号：US20200279927A1

公开(公告)日：2020-09-03

申请号：US16870308

申请日：2020-05-08

Applicant: National Institute of Advanced Industrial Science and Technology ,  WACOM R&D Corporation

Inventor： Shigeki SAKAI ,  Mitsue TAKAHASHI ,  Masaki KUSUHARA ,  Masayuki TODA ,  Masaru UMEDA ,  Yoshikazu SASAKI

IPC: H01L21/28 ,  H01L29/66 ,  G11C11/22 ,  H01L21/02 ,  H01L29/78 ,  H01L29/51

Abstract: [Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm

公开(公告)号：US10686043B2

公开(公告)日：2020-06-16

申请号：US15493995

申请日：2017-04-21

Applicant: National Institute of Advanced Industrial Science and Technology ,  WACOM R&D Corporation

Inventor： Shigeki Sakai ,  Mitsue Takahashi ,  Masaki Kusuhara ,  Masayuki Toda ,  Masaru Umeda ,  Yoshikazu Sasaki

IPC: H01L29/40 ,  H01L21/28 ,  H01L29/66 ,  G11C11/22 ,  H01L21/02 ,  H01L29/78 ,  H01L29/51 ,  H01L27/1159 ,  H01L29/49

Abstract: [Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm