Invention Grant
- Patent Title: Dry etching apparatus
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Application No.: US15460771Application Date: 2017-03-16
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Publication No.: US10692701B2Publication Date: 2020-06-23
- Inventor: Chang-Yin Chen , Tung-Wen Cheng , Che-Cheng Chang , Jr-Jung Lin , Chih-Han Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01J37/32 ; H01L21/3213 ; H01L29/66 ; H01L29/78 ; H01L21/67
Abstract:
A dry etching apparatus includes a process chamber, a stage, a gas supply device and a plasma generating device. The stage is in the process chamber and is configured to support a wafer, wherein the wafer has a center region and a periphery region surrounding the center region. The gas supply device is configured to supply a first flow of an etching gas to the center region and supply a second flow of the etching gas to the periphery region. The plasma generating device is configured to generate plasma from the etching gas.
Public/Granted literature
- US20170186588A1 DRY ETCHING APPARATUS Public/Granted day:2017-06-29
Information query
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