Invention Grant
- Patent Title: Magnetoresistive random access memory wherein number of memory cells in each string is equal to number of strings connected in parallel
-
Application No.: US16167485Application Date: 2018-10-22
-
Publication No.: US10700126B2Publication Date: 2020-06-30
- Inventor: Ting-Hsiang Huang , Yi-Chung Sheng , Sheng-Yuan Hsueh , Kuo-Hsing Lee , Chih-Kai Kang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@57518885
- Main IPC: H01L27/22
- IPC: H01L27/22 ; G11C11/16 ; H01L43/08
Abstract:
A magnetic random access memory (MRAM) includes device strings coupled in parallel, each comprising magnetic tunnel junctions (MTJs) coupled in serial, wherein a quantity of the MTJs of each of the device strings is equal to a quantity of the device strings, and an equivalent resistance (Req) of the MTJs is equal to an average of the sum of a high resistance of one of the MTJs and a low resistance of another MTJ.
Public/Granted literature
Information query
IPC分类:
