A semiconductor device and a method for fabricating the same. The semiconductor device includes a substrate. At least one trench line is formed within the substrate. A pad layer is formed in contact with the at least one trench line. A seed layer is formed on and in contact with the pad layer. The seed layer has a Root Mean Square surface roughness equal to or less than 3 Angstroms. A magnetic tunnel junction stack is formed on and in contact with the seed layer. The method includes forming a seed layer on and in contact with a semiconductor structure. The seed layer is annealed and then planarized. A magnetic tunnel junction stack is formed on and in contact with the seed layer after the seed layer has been planarized.