Invention Grant
- Patent Title: Four-or-more-component-based chalcogenide phase-change material and memory device comprising the same
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Application No.: US16201295Application Date: 2018-11-27
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Publication No.: US10700278B2Publication Date: 2020-06-30
- Inventor: Young Min Jhon , Yong Tae Kim , Chun Keun Kim , Young-Hwan Kim , Minho Choi , Sehyun Kwon
- Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Seoul
- Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Seoul
- Agency: Cantor Colburn LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3da04d40
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
The present invention provides a chalcogenide phase-change material represented by the following Chemical Formula 1, and a memory device including the same. Ma(AxSbyTe(1-x-y))b [Chemical Formula 1] In Chemical Formula 1, M denotes an element having a doping formation energy ΔEf in a range of −3 eV/atom to 0.5 eV/atom, A denotes indium (In) or germanium (Ge), a and b are each positive numbers and selected to satisfy a+b=1, x ranges from 0.15 to 0.3, and y ranges from 0.05 to 0.25.
Public/Granted literature
- US20200083445A1 FOUR-OR-MORE-COMPONENT-BASED CHALCOGENIDE PHASE-CHANGE MATERIAL AND MEMORY DEVICE COMPRISING THE SAME Public/Granted day:2020-03-12
Information query
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