Invention Grant
- Patent Title: Highly sensitive, low power fluxgate magnetic sensor integrated onto semiconductor process technologies
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Application No.: US16502317Application Date: 2019-07-03
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Publication No.: US10705159B2Publication Date: 2020-07-07
- Inventor: Erika Lynn Mazotti , Dok Won Lee , William David French , Byron J R Shulver , Thomas Dyer Bonifield , Ricky Alan Jackson , Neil Gibson
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: G01R33/04
- IPC: G01R33/04 ; G01R33/00
Abstract:
An integrated fluxgate device has a magnetic core disposed over a semiconductor substrate. A first winding is disposed in a first metallization level above and a second metallization level below the magnetic core, and is configured to generate a first magnetic field in the magnetic core. A second winding is disposed in the first and second metallization levels and is configured to generate a second magnetic field in the magnetic core. A third winding is disposed in the first and second metallization levels and is configured to sense a magnetic field in the magnetic core that is the net of the first and second magnetic fields.
Public/Granted literature
- US20190324097A1 HIGHLY SENSITIVE, LOW POWER FLUXGATE MAGNETIC SENSOR INTEGRATED ONTO SEMICONDUCTOR PROCESS TECHNOLOGIES Public/Granted day:2019-10-24
Information query
