Invention Grant
- Patent Title: Solid state memory device, and manufacturing method thereof
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Application No.: US15396469Application Date: 2016-12-31
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Publication No.: US10707121B2Publication Date: 2020-07-07
- Inventor: Jun Liu , Mark A. Levan , Gordon A. Haller , Fei Wang , Wei Yeeng Ng , Wesley O. McKinsey , Zhiqiang Xie , Jeremy F. Adams , Hongbin Zhu , Jun Zhao
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporatino
- Current Assignee: Intel Corporatino
- Current Assignee Address: US CA Santa Clara
- Agency: Thorpe North & Western, LLP
- Agent David W. Osborne
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L27/11575 ; H01L27/11573 ; H01L27/11526 ; H01L27/11548 ; H01L23/528 ; H01L23/522 ; H01L23/532 ; H01L27/11582 ; H01L27/11556

Abstract:
Conductive structure technology is disclosed. In one example, a conductive structure can include an interconnect and a plurality of conductive layers overlying the interconnect. Each conductive layer can be separated from an adjacent conductive layer by an insulative layer. In addition, the conductive structure can include a contact extending through the plurality of conductive layers to the interconnect. The contact can be electrically coupled to the interconnect and insulated from the plurality of conductive layers. Associated systems and methods are also disclosed.
Public/Granted literature
- US20180190540A1 A Solid State Memory Device, and Manufacturing Method Thereof Public/Granted day:2018-07-05
Information query
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