发明授权
- 专利标题： Transistor, semiconductor memory device, and method of manufacturing transistor
-
申请号： US16122834申请日： 2018-09-05
-
公开(公告)号： US10714629B2公开(公告)日： 2020-07-14
- 发明人: Nobuyoshi Saito , Tomomasa Ueda , Kentaro Miura , Keiji Ikeda , Tsutomu Tezuka
- 申请人： TOSHIBA MEMORY CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Foley & Lardner LLP
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@c21ee17
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L27/108 ; H01L29/66 ; H01L21/02
摘要：
According to one embodiment, a transistor includes first to third conductors, first and second oxide semiconductors, and a gate insulating film. The first and second conductors are stacked via an insulator above a substrate. The first oxide semiconductor is formed on the first conductor. The second oxide semiconductor is formed on the first oxide semiconductor. The second oxide semiconductor have a pillar shape through the second conductor along a first direction crossing a surface of the substrate. The second oxide semiconductor is different from the first oxide semiconductor. The gate insulating film is formed between the second conductor and the second oxide semiconductor. The third conductor is formed on the second oxide semiconductor.
公开/授权文献
信息查询
IPC分类:
