Transistor, semiconductor memory device, and method of manufacturing transistor

Invention Grant

US10714629B2 Transistor, semiconductor memory device, and method of manufacturing transistor 有权

Please log in to see more content

Patent Title: Transistor, semiconductor memory device, and method of manufacturing transistor
Application No.: US16122834

Application Date: 2018-09-05
Publication No.: US10714629B2

Publication Date: 2020-07-14
Inventor: Nobuyoshi Saito , Tomomasa Ueda , Kentaro Miura , Keiji Ikeda , Tsutomu Tezuka
Applicant: TOSHIBA MEMORY CORPORATION
Applicant Address: JP Tokyo
Assignee: TOSHIBA MEMORY CORPORATION
Current Assignee: TOSHIBA MEMORY CORPORATION
Current Assignee Address: JP Tokyo
Agency: Foley & Lardner LLP
Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@c21ee17
Main IPC: H01L29/786
IPC: H01L29/786 ; H01L27/108 ; H01L29/66 ; H01L21/02

Transistor, semiconductor memory device, and method of manufacturing transistor

Abstract:

According to one embodiment, a transistor includes first to third conductors, first and second oxide semiconductors, and a gate insulating film. The first and second conductors are stacked via an insulator above a substrate. The first oxide semiconductor is formed on the first conductor. The second oxide semiconductor is formed on the first oxide semiconductor. The second oxide semiconductor have a pillar shape through the second conductor along a first direction crossing a surface of the substrate. The second oxide semiconductor is different from the first oxide semiconductor. The gate insulating film is formed between the second conductor and the second oxide semiconductor. The third conductor is formed on the second oxide semiconductor.

Public/Granted literature

US20190237581A1 TRANSISTOR, SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF MANUFACTURING TRANSISTOR Public/Granted day:2019-08-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/786	......薄膜晶体管