A semiconductor device includes: a first memory section, a first peripheral circuit section, and a second peripheral circuit section that are disposed on a substrate; and a second memory section and a wiring section that are stacked on the second peripheral circuit section, wherein the first memory section includes a plurality of first memory cells, each of the first memory cells including a cell transistor and a capacitor connected to the cell transistor, the second memory section includes a plurality of second memory cells, each of the second memory cells including a variable resistance element and a select element coupled in series to each other, and the wiring section includes a plurality of line patterns, wherein the line patterns and the second memory cells are higher than the capacitor with respect to the substrate.